High-Mobility Transistor for Power Electronics
Official patent title
High mobility transistor with algan buffer layer
Arabic title: ترانزستور عالي قابلية الحركة بطبقة وسيطة من AlGaN
Invention
Invention
Problem
High-electron-mobility transistors face continuing limits in two-dimensional electron-gas mobility and density, electrical control, heat dissipation, reliability, and the fabrication complexity of advanced heterostructures.
Why it matters
Improved control of strain, band alignment, and the channel region could support high-power or high-frequency device research, but claimed electrical and thermal behavior needs independent fabrication and measurement.
Approach
The device stacks InN and AlN nucleation layers, an AlGaN buffer, a GaN channel, a two-dimensional MoS2 layer, a second AlGaN layer, a p-GaN cap, and a platinum gate on a SiC substrate.
Who may benefit
Potential beneficiaries include GaN power-device developers, radio-frequency semiconductor researchers, compound-semiconductor foundries, epitaxy and thin-film equipment suppliers, and laboratories studying strain-engineered two-dimensional heterostructures.
Potential value
The patent provides a detailed multilayer HEMT architecture and fabrication sequence that integrates a strain-responsive MoS2 layer with two AlGaN regions and a normally-off-oriented p-GaN gate stack.
Background
Background
HEMTs use a heterojunction-confined two-dimensional electron gas to support high-frequency and high-power operation. GaN and AlGaN offer wide bandgaps, polarization effects, and favorable high-field properties, but device designers still seek higher channel mobility and density, better threshold control, thermal management, and reliability. Lattice matching and band alignment constrain conventional structures, while added materials or structural modifications can increase process complexity. The disclosure introduces a multilayer nitride and two-dimensional-material stack intended to enable strain and bandgap engineering.
Technology overview
Technology overview
On a SiC substrate, the architecture places approximately 5 nm InN and AlN nucleation layers, a first AlGaN buffer with about 51% aluminum, a GaN channel, aluminum source and drain contacts, and an approximately 2 nm two-dimensional MoS2 layer. A second AlGaN layer, p-type GaN cap, and platinum gate complete the stack. The method specifies sputtering, chemical vapor deposition, layer dimensions, spacing, and doping. Claims also state configured electrical and thermal operating values that require independent confirmation.
Potential applications
Potential applications
- Potential high-frequency transistor research for radio-frequency systems.
- Potential high-power switching-device development after full validation.
- Potential study of strain-tunable MoS2/GaN heterostructures.
- Potential compound-semiconductor process-integration research.
Evidence-supported advantages
Evidence-supported advantages
- Integrates two-dimensional MoS2 within a nitride HEMT stack.
- Uses two AlGaN regions with a GaN channel and p-GaN cap.
- Defines layer thicknesses, lateral dimensions, and gate placement.
- Provides a corresponding sputtering and deposition sequence.
Development stage
Development stage
Patent publication with a described device structure and fabrication method; independent validation and commercialization were not established.
Commercial opportunity
Commercial opportunity
The architecture may interest GaN power and RF device programs or compound-semiconductor foundries. Progress requires fabrication reproducibility, interface and defect characterization, contact resistance, threshold stability, breakdown and gate reliability, measured mobility and current, thermal resistance, switching and RF figures of merit, wafer-scale yield, packaging, process compatibility, lifetime testing, and cost comparison with established GaN HEMTs.
Patent classifications
Patent classifications
WIPO IPC
- H10D30/67Inorganic electric semiconductor devices
- H10D30/01Inorganic electric semiconductor devices
CPC
- H10D30/015Inorganic electric semiconductor devices
- H10D30/475Inorganic electric semiconductor devices
- H10D30/4755Inorganic electric semiconductor devices
- H10D30/6738Inorganic electric semiconductor devices
- H10D30/675Inorganic electric semiconductor devices
- H10D62/343Inorganic electric semiconductor devices
- H10D62/357Inorganic electric semiconductor devices
- H10D62/82Inorganic electric semiconductor devices
- H10D62/85Inorganic electric semiconductor devices
- H10D62/8503Inorganic electric semiconductor devices
- H10D62/883Inorganic electric semiconductor devices
- H10D64/0124Inorganic electric semiconductor devices
- H10D64/62Inorganic electric semiconductor devices
- H10D64/64Inorganic electric semiconductor devices
- H10D64/256Inorganic electric semiconductor devices
Inventors
Inventors
- First inventorGhada A. Khouqeer
- InventorArihant Raj Siddarth
- InventorGaurav Jayaswal
- InventorRahul Sharma
- InventorYogita Sharma
- InventorPriya Kaushal
- InventorGargi Khanna
- InventorTahani A. Alrebdi
- InventorAbdullah N. Alodhayb
Keywords
Keywords
- HEMT
- AlGaN buffer layer
- GaN channel
- MoS2
- p-GaN
- silicon carbide
- strain engineering
- power electronics
Patent document and drawings
Patent document and drawings
The patent publication is mapped to this record. Patent drawings remain within that publication; no separately cleared public media package has been supplied.