US 12243928 B1Patent grantUnited States

MoS2-Barrier HEMT for RF Electronics

Official patent title

P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D barrier

Arabic title: ترانزستور عالي حركية الإلكترونات (HEMT) من P-GaN بحاجز ثنائي الأبعاد قائم على MOS2

Invention

Problem

HEMT development must balance electron mobility, carrier density, threshold control, heat dissipation, reliability, and manufacturability as power and high-frequency demands increase.

Why it matters

Better-controlled wide-bandgap transistors could expand design options for fast switching, radio-frequency electronics, radar, and power conversion.

Approach

The device inserts a two-dimensional MoS2 layer into a p-GaN/AlGaN/GaN HEMT stack on SiC and uses strain-dependent bandgap tuning together with defined nucleation, buffer, channel, contact, and cap layers.

Who may benefit

Potential beneficiaries include power-semiconductor manufacturers, RF and microwave device developers, wireless and radar companies, semiconductor foundries, and wide-bandgap materials researchers.

Potential value

The patent supplies a fully dimensioned p-GaN HEMT layer stack that combines SiC, InN, AlN, AlGaN, GaN, and a 2 nm MoS2 barrier with a platinum gate.

Background

GaN HEMTs use a two-dimensional electron gas at a heterojunction to support high-frequency and high-power operation. Their performance depends on mobility, carrier density, threshold voltage, thermal behavior, and reliability. Conventional III–V heterostructures can face lattice-matching and band-alignment constraints, while structural changes may complicate fabrication. The patent adds a two-dimensional MoS2 layer to a p-GaN HEMT on silicon carbide and uses compressive or tensile strain to change the MoS2 bandgap. The assigned evidence gives claimed device metrics but does not clearly distinguish physical measurements from modelling.

Technology overview

On a 1.99 μm SiC substrate, the disclosed stack uses 5 nm InN and 5 nm AlN nucleation layers, a 2.64 μm AlGaN buffer, a 34 nm GaN channel, aluminum source and drain contacts, a 2 nm MoS2 layer, a 14.7 nm second AlGaN layer, a 60 nm p-GaN cap, and a platinum gate. InN is deposited by DC reactive magnetron sputtering and AlN by chemical vapor deposition. Claims provide strain response and electrical, thermal, current, resistance, threshold, power, and voltage ranges.

Potential applications

Potential use in high-frequency RF and microwave electronics.
Potential use in power-switching and power-conversion devices.
Potential use in wireless-communication and radar hardware research.
Potential use as a platform for strain-tunable 2D/III-nitride devices.

Evidence-supported advantages

Adds a two-dimensional MoS2 layer for strain-dependent bandgap control.
Uses a SiC substrate and a multilayer III-nitride HEMT architecture.
Defines nanometer- and micrometer-scale layer dimensions and contact spacing.
Provides a fabrication sequence using sputtering and chemical vapor deposition.

Development stage

Patent publication describing a device structure and fabrication sequence; physical prototype status, independent electrical validation, and commercialization were not established.

Commercial opportunity

The structure may interest wide-bandgap foundries and RF or power-device developers through modelling, process-integration, or prototype partnerships. Diligence should confirm whether claimed metrics are simulated or measured, then address epitaxial quality, MoS2 transfer or deposition, interface defects, wafer uniformity, thermal cycling, reliability, gate leakage, yield, packaging, and foundry compatibility.

Patent classifications

WIPO IPC

H10D30/67Inorganic electric semiconductor devices
H10D30/01Inorganic electric semiconductor devices

CPC

H10D30/015Inorganic electric semiconductor devices
H10D30/475Inorganic electric semiconductor devices
H10D30/4755Inorganic electric semiconductor devices
H10D30/6738Inorganic electric semiconductor devices
H10D30/675Inorganic electric semiconductor devices
H10D62/343Inorganic electric semiconductor devices
H10D62/357Inorganic electric semiconductor devices
H10D62/82Inorganic electric semiconductor devices
H10D62/85Inorganic electric semiconductor devices
H10D62/8503Inorganic electric semiconductor devices
H10D62/883Inorganic electric semiconductor devices
H10D64/0124Inorganic electric semiconductor devices
H10D64/62Inorganic electric semiconductor devices
H10D64/64Inorganic electric semiconductor devices
H10D64/256Inorganic electric semiconductor devices

Inventors

First inventorGhada A. Khouqeer
InventorArihant Raj Siddarth
InventorGaurav Jayaswal
InventorRahul Sharma
InventorYogita Sharma
InventorPriya Kaushal
InventorGargi Khanna
InventorTahani A. Alrebdi
InventorAbdullah N. Alodhayb

Keywords

p-GaN HEMT
MoS2
two-dimensional barrier
silicon carbide
AlGaN
bandgap tuning
power electronics
RF transistor

Patent document and drawings

The patent publication is mapped to this record. Patent drawings remain within that publication; no separately cleared public media package has been supplied.