SA 1020255441 B1Patent grantSaudi Arabia

Tunable GaN Transistor for High-Frequency Power

Official patent title

Gallium Nitride Transistor with Molybdenum Disulfide Barrier

Arabic title: ترانزستور نيتريد الغاليوم بحاجز ثنائي كبريتيد الموليبدينوم

Invention

Problem

Conventional silicon power transistors are approaching material limits in high-power and high-frequency operation. Wide-bandgap HEMTs can address these conditions, but their channel, gate, bandgap, and electron-transport characteristics still require controlled device engineering.

Why it matters

Improved high-electron-mobility transistor architectures are relevant to radio-frequency communications, radar, and power electronics that require fast switching, efficient electron transport, and operation under demanding electrical conditions.

Approach

The invention defines a bandgap-tunable p-GaN HEMT built on a stacked semiconductor structure and incorporating a two-dimensional molybdenum disulfide layer. The layer stack includes a silicon-carbide substrate, nucleation and buffer layers, a GaN channel, source and drain contacts, a p-GaN cap, and a platinum gate, with strain engineering used to influence electron mobility and bandgap behavior.

Who may benefit

Potential beneficiaries include compound-semiconductor foundries, RF and microwave device developers, power-electronics manufacturers, and organizations developing wireless, radar, and high-frequency systems.

Potential value

The architecture combines GaN/AlGaN HEMT layers with a two-dimensional MoS2 barrier and defined gate structure, offering a device-design route for tuning bandgap and electron-transport behavior within a high-power, high-frequency semiconductor platform.

Background

Power MOSFET improvement based on silicon is slowing as devices approach theoretical material limits. High-electron-mobility transistors based on wide-bandgap semiconductors are being investigated for wireless communications, radar, and power electronics. Their heterostructures create a two-dimensional electron gas that supports high carrier mobility, while two-dimensional materials and strain engineering provide additional ways to tune the channel and gate region. The patent addresses this design space with a layered p-GaN HEMT incorporating MoS2.

Technology overview

The claimed device uses a silicon-carbide substrate followed by InN and AlN nucleation layers, AlGaN buffer material, a GaN channel, and aluminum source and drain contacts. A p-GaN cap and two-dimensional MoS2 layer are integrated with a second AlGaN buffer and platinum gate contact. The described arrangement is intended to tune the bandgap, strain, two-dimensional electron-gas region, electron mobility, and gate behavior.

Potential applications

Radio-frequency transistors for high-frequency wireless communication equipment.
Semiconductor switching or amplification components for radar systems.
Wide-bandgap devices for high-power electronic conversion and control.
Research and development platforms for tunable-bandgap GaN HEMT architectures.

Evidence-supported advantages

The structure combines a wide-bandgap GaN/AlGaN heterostructure with a two-dimensional MoS2 layer.
Bandgap and channel behavior can be addressed through the specified layer stack and strain engineering.
The device defines source, drain, cap, buffer, channel, and platinum-gate elements within one architecture.
The design is directed to high-power and high-frequency semiconductor operation.

Development stage

The patent describes a device architecture, layer configuration, fabrication-oriented embodiments, figures, and claims; fabricated-device performance and manufacturing readiness were not independently verified.

Commercial opportunity

Potential opportunities include semiconductor-design licensing and joint development with compound-semiconductor foundries or RF and power-device manufacturers. Commercialization would require fabrication-process integration, yield and reliability studies, thermal and electrical characterization, packaging, and application-specific performance validation.

Patent classifications

WIPO IPC

H01L41/012Semiconductor devices not covered by class H10

CPC

No classification assigned

Inventors

First inventorGhada A. Khouqeer
InventorArihant Raj Siddarth
InventorGaurav Jayaswal
InventorRahul Sharma
InventorYogita Sharma
InventorPriya Kaushal
InventorGargi Khanna
InventorTahani A. Alrebdi
InventorAbdullah N. Alodhayb

Keywords

gallium nitride
HEMT
molybdenum disulfide
tunable bandgap
two-dimensional electron gas
strain engineering
power electronics
radio frequency

Patent document and drawings

The patent publication is mapped to this record. Patent drawings remain within that publication; no separately cleared public media package has been supplied.